TC3131 rev2_20040412 transcom, inc., 90 dasoong 7 th road, tainan science- based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 1 / 4 2.4 ghz 1w mmic features ? p -1 db: 30 dbm ? small signal gain: 28 db ? power added efficiency: 32 % ? ip3: 39 dbm ? bias condition: 400 ma @ 7 v description the TC3131 is a 2 stage phemt mmic power amplifier. it is designed for use in low cost and high volume 2.4-2.5 ghz ism band applications. the mmic provides a typical gain of 26 db and saturation power of more than 30 dbm. typical bias condition is 7v at 400 ma. the mmic is p ackaged in a standard so-8 power package. the copper based carrier of the package allows direct soldering of the device to the pcb for proper heat sinking. the input and output matching of the mmic require external components. electrical specifications (ta = 25 c) symbol description min typ max units freq frequency range 2.4 2.5 ghz ssg small signal gain 26 28 db p -1 db output power at 1 db gain compression 29 30 dbm p -3 db output power at 3 db gain compression 30 31 dbm ip3 third order intercept point 37 39 dbm vswr, in input vswr 2:1 - vdd supply voltage 7 volt vg gate voltage -0.8 -1.5 -2 volt idd current supply without rf 400 ma idp -1 current supply @ pout = p -1 db 460 ma a power added efficiency 32 % photo enlargement v g rf out vd gnd gnd gnd rf in rf out
TC3131 rev2_20040412 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 2 / 4 absolute maximum ratings symbol parameter/conditions min. max. units v dd drain-source voltage 12 volts i dd total drain current 1500 ma p in rf input power 8 dbm p t power dissipation 6 w t ch operating channel temperature 175 c t stg storage temperature -65 175 c note: 1. this gaas mmic is susceptible to damage from electrostatic discharge. proper precautions should be used when handling these devices. 2. specifications subject to change without notice. test circuits evaluation board schematic
TC3131 rev2_20040412 transcom, inc., 90 dasoong 7 th road, tainan science- based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 3 / 4 evaluation board pcb material: fr4 er = 4.6 thickness = 31 mil unit: mil * dxf file of the pcb can be downloaded from our web-site at www.transcominc.com.tw * application notes: for better heat sinking and grounding, it's recommended to have the via holes beneath TC3131 filled with solder and have two screws installed on required heat sink plate besides TC3131 on the pcb area. evaluation board parts list part type reference designator description manufacturer part number capacitor c1 3.3 pf 0603 murata grm39c0g3r3c50v capacitor c2, c5 0.75 pf 0603 murata grm39c0gr75c50v capacitor c3 1.8 pf 0603 murata grm39c0g1r8c50v capacitor c4 2 pf 0603 murata grm39c0g020c50v capacitor c6 3.9 pf 0603 murata grm39c0g3r9c50v capacitor c7~10 1000 pf 0603 murata grm39c0g102j50v capacitor c11, c12 0.1 uf 0603 murata grm39y5v104z25v capacitor c13 4.7uf tantalum cap.
TC3131 rev2_20040412 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 4 / 4 8 7 6 3 2 1 5 4 rf in matching circuit gnd vg rf out matching circuit vd gnd gnd connection diagram and pin descriptions pin # name description 1 rf in rf input (internally dc blocked) 2, 4, 8 gnd ground 3 vg fet gate bias 5, 6 rf out rf output and v d2 external matching circuit required 7 v d input stage drain bias physical dimensions (unit: inch)
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